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| NTHS4101P Power MOSFET -20 V, 6.7 A, P-Channel ChipFETt Features * Offers an Ultra Low RDS(on) Solution in the ChipFET Package * Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 * * * * * making it an Ideal Device for Applications where Board Space is at a Premium Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology Pb-Free Package is Available V(BR)DSS http://onsemi.com RDS(on) TYP 21 mW @ -4.5 V -20 V 30 mW @ -2.5 V 42 mW @ -1.8 V S -6.7 A ID MAX G Applications * Optimized for Battery and Load Management Applications in * * Portable Equipment such as MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistant and other Portable Applications Charge Control in Battery Chargers Buck and Boost Converters 1 Value -20 "8.0 -4.8 -6.7 1.3 2.5 0.7 1.3 IDM Is RqJA RqJA TL -190 -4.8 50 95 260 C A A C/W Unit Vdc Vdc A D W D S 7 6 5 2 3 4 D P-Channel MOSFET ChipFET CASE 1206A STYLE 1 8 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous - 5 seconds Total Power Dissipation Continuous @ TA = 25C (5 sec) @ TA = 25C Continuous @ 85C (5 sec) @ 85C Pulsed Drain Current - tp = 10 ms Continuous Source Current Thermal Resistance (Note 1) Junction-to-Ambient, 5 sec Junction-to-Ambient, Continuous Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID ID PD PIN CONNECTIONS D 8 1 MARKING DIAGRAM 1 2 3 4 C6 M G 8 7 6 5 D D D G C6 = Specific Device Code M = Month Code G = Pb-Free Package ORDERING INFORMATION Device NTHS4101PT1 NTHS4101PT1G Package ChipFET ChipFET (Pb-free) Shipping 3000 Tape / Reel 3000 Tape / Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2007 1 February, 2007 - Rev. 3 Publication Order Number: NTHS4101P/D NTHS4101P ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 2) Temperature Coefficient (Positive) Gate-Body Leakage Current Zero Zero Gate Voltage Drain Current V(Br)DSS IGSS IDSS VGS = 0 Vdc, ID = -250 mAdc VDS = 0 Vdc, VGS = "8.0 Vdc VDS = -16 Vdc, VGS = 0 Vdc VDS = -16 Vdc, VGS = 0 Vdc, TJ = 85C -20 "100 -1.0 -5.0 Vdc nAdc mAdc Symbol Test Condition Min Typ Max Unit ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-to-Source On-Resistance VGS(th) RDS(on) VDS = VGS, ID = -250 mAdc VGS = -4.5 Vdc, ID = -4.8 Adc VGS = -2.5 Vdc, ID = -4.2 Adc VGS = -1.8 Vdc, ID = -1.0 Adc VDS = -5.0 Vdc, ID = -4.8 Adc IS = -4.8 Adc, VGS = 0 Vdc -0.45 21 30 42 15 -0.8 -1.2 -1.5 34 40 52 Vdc mW Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge gFS VSD S V Ciss Coss Crss VDS = -16 Vdc VGS = 0 V f = 1.0 MHz 2100 290 200 pF td(on) tr td(off) tf Qg Qgs Qgd VDD = -16 Vdc VGS = -4.5 Vdc ID = -4.5 Adc RG = 2.5 W VGS = -4.5 Vdc ID = -4.5 Adc VDS = -16 Vdc (Note 3) 8.0 28 75 60 25 4.0 7.0 35 ns nC 2. Pulse Test: Pulse Width = 250 ms, Duty Cycle = 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTHS4101P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 10 -ID, DRAIN CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 -1.2 V 6 7 8 -1.4 V -1.6 V VGS = -10 V to -2.4 V -1.8 V TJ = 25C -ID, DRAIN CURRENT (AMPS) 10 9 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3 TJ = -55C 125C 25C -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.1 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS = -1.8 V 0.08 1.5 Figure 2. Transfer Characteristics VGS = -4.5 V 1.3 0.06 1.1 0.04 VGS = -2.5 V 0.9 0.02 0 2 4 VGS = -4.5 V 0.7 0.5 -50 12 -ID, DRAIN CURRENT (AMPS) 6 8 10 14 16 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 10000 VGS = 0 V -IDSS, LEAKAGE (nA) 1000 TJ = 125C TJ = 100C 100 Figure 4. On-Resistance Variation with Temperature 10 TJ = 25C 1 0.1 0 2 4 6 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTHS4101P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5000 4500 C, CAPACITANCE (pF) 4000 3500 3000 2500 2000 1500 1000 500 VDS = 0 V VGS = 0 V 5 QT 4 TJ = 25C 3 Crss Ciss 2 Q1 Q2 1 0 0 3 ID = -4.5 A TJ = 25C 12 21 6 9 15 18 Qg, TOTAL GATE CHARGE (nC) 24 27 Coss 4 6 8 10 12 14 16 18 20 0 -6 -4 -2 0 2 -VGS -VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance Variation Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Gate Charge 1000 -IS, SOURCE CURRENT (AMPS) VDD = -16 V ID = -4.5 A VGS = -4.5 V t, TIME (ns) 100 td(off) tf tr 10 td(on) 5 VGS = 0 V TJ = 25C 4 3 2 1 0 0.4 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.5 0.6 0.7 0.8 0.9 1.0 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 8. Resistive Switching Time Variation vs. Gate Resistance 100 -I D, DRAIN CURRENT (AMPS) Figure 9. Diode Forward Voltage vs. Current 10 10 ms 100 ms 1 ms VGS = -8 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 1 0.1 0.01 0.1 1 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 Figure 10. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTHS4101P PACKAGE DIMENSIONS ChipFETt CASE 1206A-03 ISSUE H D 8 7 6 5 q L 5 6 3 7 2 8 1 HE 1 2 3 4 E 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. DIM A b c D E e e1 L HE q MILLIMETERS NOM MAX 1.05 1.10 0.30 0.35 0.15 0.20 3.05 3.10 1.65 1.70 0.65 BSC 0.55 BSC 0.28 0.35 0.42 1.80 1.90 2.00 5 NOM MIN 1.00 0.25 0.10 2.95 1.55 INCHES NOM 0.041 0.012 0.006 0.120 0.065 0.025 BSC 0.022 BSC 0.011 0.014 0.071 0.075 5 NOM MIN 0.039 0.010 0.004 0.116 0.061 MAX 0.043 0.014 0.008 0.122 0.067 e1 e b c A 0.05 (0.002) 0.017 0.079 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. GATE 5. SOURCE 6. DRAIN 7. DRAIN 8. DRAIN SOLDERING FOOTPRINTS* 2.032 0.08 2.032 0.08 1 1 1.727 0.068 2.362 0.093 0.635 0.025 PITCH 2.362 0.093 8X 8X 0.457 0.018 0.66 0.026 2X 2X mm inches 0.457 0.018 0.66 0.026 mm inches Basic *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Style 1 http://onsemi.com 5 NTHS4101P ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTHS4101P/D |
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